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dc.contributor.authorZang, Keyan
dc.contributor.authorChua, Soo-Jin
dc.contributor.authorThompson, Carl V.
dc.date.accessioned2004-12-09T23:43:15Z
dc.date.available2004-12-09T23:43:15Z
dc.date.issued2005-01
dc.identifier.urihttp://hdl.handle.net/1721.1/7362
dc.description.abstractThe periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN films with decreased tensile stresses and decreased threading dislocation densities, as well as films with improved quality as indicated by x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. The possible mechanism of the reduction of tensile stress and the dislocation density is discussed in the paper.en
dc.description.sponsorshipSingapore-MIT Alliance (SMA)en
dc.format.extent595081 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen
dc.relation.ispartofseriesAdvanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subjectMetal-organic Chemical Vapour Depositionen
dc.subjectIII-V Nitridesen
dc.titleThe Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substratesen
dc.typeArticleen


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