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The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates

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Show simple item record Zang, Keyan Chua, Soo-Jin Thompson, Carl V. 2004-12-09T23:43:15Z 2004-12-09T23:43:15Z 2005-01
dc.description.abstract The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN films with decreased tensile stresses and decreased threading dislocation densities, as well as films with improved quality as indicated by x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. The possible mechanism of the reduction of tensile stress and the dislocation density is discussed in the paper. en
dc.description.sponsorship Singapore-MIT Alliance (SMA) en
dc.format.extent 595081 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.relation.ispartofseries Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject Metal-organic Chemical Vapour Deposition en
dc.subject III-V Nitrides en
dc.title The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates en
dc.type Article en

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