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High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

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Show simple item record Hartono, Haryono Chua, Soo-Jin Fitzgerald, Eugene A. Song, T.L. Chen, Peng 2004-12-10T13:55:07Z 2004-12-10T13:55:07Z 2005-01
dc.description.abstract The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation. en
dc.description.sponsorship Singapore-MIT Alliance (SMA) en
dc.format.extent 297498 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.relation.ispartofseries Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject high In InxGa1-xN en
dc.subject highly-mismatched systems en
dc.subject strain relaxation en
dc.subject Vpits en
dc.subject gallium nitride en
dc.subject metalorganic chemical vapor deposition en
dc.subject fGa/fIn
dc.title High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD en
dc.type Article en

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