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dc.contributor.advisorCaroline Ross.en_US
dc.contributor.authorYbarra, Juan Carlosen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2013-01-07T21:22:57Z
dc.date.available2013-01-07T21:22:57Z
dc.date.copyright2012en_US
dc.date.issued2012en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/76125
dc.descriptionThesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2012.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.abstractBlock coopolymers(BCP) have become of interest in the pursuit novel methods of nanolithography. Their ability to self-assembly into periodic geometries with nanoscale feature sizes makes them attractive as etching masks and templating materials for microelectronics and nanodevices. BCP provide a scalable and low-cost method that is compatible with existing semiconductor fabrication technologies. Though various studies have looked at several combinations of block copolymers we focus on the use of solvent annealing as a method to tune the morphology of PS-b-PFS and PS-b- PFS-b-PS block copolymers. These polymers have shown promise as precursors to a variety of materials and in particular this combination of block copolymers is attractive because we have at our dispossible etching methods with a high selectivity between these two polymers.en_US
dc.description.statementofresponsibilityby Juanml Carlos Ybarra.en_US
dc.format.extent37 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineering.en_US
dc.titleA comparison of AB diblock and ABA triblock copolymers of polystyrene and polyferocenylsilane for nanolithography applicationsen_US
dc.typeThesisen_US
dc.description.degreeS.B.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc821212054en_US


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