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dc.contributor.advisorCarl V. Thompson.en_US
dc.contributor.authorKim, Gye Hyunen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2013-07-10T14:54:41Z
dc.date.available2013-07-10T14:54:41Z
dc.date.issued2012en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/79560
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2012.en_US
dc.description"September 2012." Cataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (p. 65-66).en_US
dc.description.abstractIn the as-deposited state, thin films are generally far from equilibrium and will agglomerate or dewet to form arrays of islands when sufficient atomic motion is allowed. Dewetting can occur well below the films' melting temperature in the solid-state. The dewetting process begins by formation and motion of film-substrate-vapor three-phase boundaries. These film edges retract via capillarity-driven mass transport. In the absence of film or substrate patterning, the dewetting morphology of polycrystalline films is not well ordered. However, dewetting in single crystal films leads to a much more regular morphology, due to surface and interfacial energy anisotropy and surface self-diffusivity anisotropy. When dewetting of such films is templated by pre-patterning, dewetting patterns much smaller than the original template patterns can be generated. This makes templated dewetting a potential self-assembly method for generation of complex structures with sub-lithographic length scales. However, control of such patterns in single crystal films requires a significant degree of quantitative understanding of anisotropic dewetting in the solid-state. As a starting point for quantitative research on solid-state dewetting of single crystal films, dewetting of thin single crystal films that were pre-patterned to have edges with specific in-plane orientations were quantitatively characterized and their observed behavior was modeled. Edges aligned to specific crystallographic orientations remain straight as they retract, while edges with other crystallographic orientations develop in-plane facets composed of kinetically stable edges. Therefore, a quantitative understanding of the retraction of kinetically stable edges can serve as the basis for understanding the retraction of edges with all other orientations. Measurements of the rates of retraction of kinetically stable edges for single crystal (100) and (110) Ni films on single crystal MgO are reported. In cross section, the retracting edges develop out-of-plane facets that are generally consistent with the facets expected from the equilibrium Wulff shape. To capture the observed anisotropic character of the edge retraction rate, capillarity-driven edge retraction through atomic surface self-diffusion was modeled in 2 dimensions using the crystalline formulation method developed by Carter and coworkers. The model and experiments show a similar time scaling for the edge retraction distance. Also, the magnitudes of the predicted retraction rates are consistent with the specific observed retraction rate anisotropy given the large range of error in parameters used in the model. Other possible sources of error include the fact that actual edges are not fully facetted and are sometimes bound by non-equilibrium facets.en_US
dc.description.statementofresponsibilityby Gye Hyun Kim.en_US
dc.format.extent66 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineering.en_US
dc.titleQuantitative analysis of anisotropic edge retraction during solid-state dewetting of thin single crystal filmsen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc851452557en_US


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