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Characterization and device applications of II-VI nanocomposites

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dc.contributor.advisor Klavs F. Jensen. en_US Heine, Jason Randall, 1972- en_US
dc.contributor.other Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. en_US 2005-08-23T20:15:29Z 2005-08-23T20:15:29Z 2001 en_US 2001 en_US
dc.description Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001. en_US
dc.description Includes bibliographical references. en_US
dc.description.abstract This thesis describes the synthesis and characterization of CdSe core - ZnS shell (CdSe)ZnS nanocrystals, which behave as quantum dots (QDs), their incorporation into transparent polymers and ZnS, and possible device applications of the resulting luminescent materials. The crystalline structure of these quantum dots is examined using XRD. The nature of the core-shell interface is inferred by comparison of the XRD spectra with calculated spectra and in consideration of TEM images of the QDs. The influence the addition of a shell material over the CdSe core has on the QD exciton energy is examined by comparing the measured and calculated change in band edge emission energy when ZnS or CdS are used as overcoat materials. Methods of incorporating the QDs into various polymers are considered and the emission of a GaN LED/ QD-containing polymer composite structure is simulated and compared with the output of actual devices. The simulation is also used as a design tool in the production of a white-light LED. Embedding the QDs into ZnS films via an electrospray technique is carried out and the resulting films characterized with x-ray diffraction and photoluminesence measurements. QD film / ZnS film structures are also considered, with atomic layer deposition used as the method for depositing the ZnS to improve the film uniformity as well as to maintain high quality deposition at temperatures low enough to be compatible with the presence of QDs. Finally, thin film devices are synthesized and the behavior of the QD photoluminescence when an electric field is applied is studied. en_US
dc.description.abstract (cont.) Significant levels of photoluminescence quenching is observed when a voltage is applied across an ITO/ZnS/QD/ZnS/Al, and similar, devices. Various reasons for this quenching are considered. en_US
dc.description.statementofresponsibility by Jason Randall Heine. en_US
dc.format.extent 121 p. en_US
dc.format.extent 8392211 bytes
dc.format.extent 8391966 bytes
dc.format.mimetype application/pdf
dc.format.mimetype application/pdf
dc.language.iso eng en_US
dc.publisher Massachusetts Institute of Technology en_US
dc.rights M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. en_US
dc.subject Materials Science and Engineering. en_US
dc.title Characterization and device applications of II-VI nanocomposites en_US
dc.type Thesis en_US Ph.D. en_US
dc.contributor.department Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. en_US
dc.identifier.oclc 50659435 en_US

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