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dc.contributor.advisorCaroline A. Ross.en_US
dc.contributor.authorHernandez, Allison, 1979-en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2005-08-23T20:21:46Z
dc.date.available2005-08-23T20:21:46Z
dc.date.copyright2002en_US
dc.date.issued2002en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/8461
dc.descriptionThesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.en_US
dc.descriptionIncludes bibliographical references (p. 45-47).en_US
dc.description.abstractMagnetic Random Access Memory (MRAM) is considered to be the most viable option for nonvolatile memory in the computer industry. This need for nonvolatile computer memory has resulted in the dramatic evolution of MRAM technology in the past ten years. Currently in the latter stages of development, emphasis is being put on experiments concerning optimization of density and reduction of the switching fields of the magnetic elements. Applications of MRAM technology are currently being explored by companies who seek to obtain relevant intellectual property in those areas. Once research is completed, companies must create a business plan that recognizes the initial, breakthrough markets and implement technology integration accordingly.en_US
dc.description.statementofresponsibilityby Allison Hernandez.en_US
dc.format.extent47 p.en_US
dc.format.extent3824053 bytes
dc.format.extent3823812 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectMaterials Science and Engineering.en_US
dc.titleAnalysis of magnetic random access memory applicationsen_US
dc.title.alternativeAnalysis of MRAM applicationsen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc50680235en_US


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