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dc.contributor.advisorMildred S. Dresselhaus.en_US
dc.contributor.authorLin, Yuxuan, Ph. D. Massachusetts Institute of Technologyen_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2015-01-20T17:58:48Z
dc.date.available2015-01-20T17:58:48Z
dc.date.copyright2014en_US
dc.date.issued2014en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/93059
dc.descriptionThesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 91-115).en_US
dc.description.abstractThe re-discovery of the atomically thin transition metal dichalcogenides (TMDs), which are mostly semiconductors with a wide range of band gaps, has diversified the family of two-dimensional materials and boosted the research on their potential applications in the fields of logic nanoelectronics and high-performance nanophotonics. Many body effects are of great significance in 2-dimensional TMDs, especially when thinned down to a monolayer. As a result, the exciton-related phenomena are prominent in TMD monolayers, which distinguish the monolayers significantly from their bulk counterparts. This thesis systematically studies the optical properties in semiconducting, monolayer TMDs, including Raman spectroscopy, photoluminescence (PL), and optical absorption. In order to further understand the excitononic properties in 2-dimensional TMDs, we took monolayer MoS2 as an example, and studied its exciton behaviors with different carrier densities and dielectric environments through PL measurements with the help of electrochemical gating and non-ionic solvent immersion. Our findings are helpful to understand better the tightly bound excitons in low-dimensional systems and to provide a simple approach to controlling the generation of excitons and trions (charged excitons) selectively and separately.en_US
dc.description.statementofresponsibilityby Yuxuan Lin.en_US
dc.format.extent115 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleOptical properties of two-dimensional transition metal dichalcogenidesen_US
dc.title.alternativeOptical properties of two-dimensional TMDsen_US
dc.title.alternativeOptical properties of 2-dimensional transition metal dichalcogenidesen_US
dc.title.alternativeOptical properties of 2D transition metal dichalcogenidesen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.identifier.oclc899994570en_US


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