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dc.contributor.advisorMarc A. Kastner.en_US
dc.contributor.authorGoldhaber-Gordon, David Joshua, 1972-en_US
dc.date.accessioned2005-08-22T18:27:32Z
dc.date.available2005-08-22T18:27:32Z
dc.date.copyright1999en_US
dc.date.issued1999en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/9450
dc.descriptionThesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 1999.en_US
dc.descriptionTitle as it appears in MIT commencement exercises program, June 1999, has the added subtitle: Strong coupling and many body effects.en_US
dc.descriptionIncludes bibliographical references (p. 115-124).en_US
dc.description.abstractThe Kondo effect, which occurs when a metal with magnetic impurities is cooled to low temperatures, has been a focus of research in solid-state physics for several decades. I have designed, fabricated, and measured a system which behaves as a single "artificial" impurity in a metal, displaying the Kondo effect. This so-called Single-Electron Transistor (SET) has several advantages over the classic bulk Kondo systems. Most obviously, only one impurity is involved, so there is no need to worry about interactions between impurities, or different impurities feeling different environments. But even more importantly all the parameters of the system, such as the binding energy of electrons on the impurity and the tunneling rate between metal and impurity, can be tuned in-situ, allowing detailed quantitative comparison to thirty years of theoretical developments whose details could not be tested in previously-studied Kondo systems.en_US
dc.description.statementofresponsibilityby David Joshua Goldhaber-Gordon.en_US
dc.format.extent124 p.en_US
dc.format.extent10544346 bytes
dc.format.extent10544102 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectPhysicsen_US
dc.titleThe Kondo effect in a single-electron transistoren_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.identifier.oclc43433678en_US


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