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Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager

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FB - NSREC2017 - FINAL Full Paper Submission - CMOSIS.pdf

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sword-2019-07-29T18:34:05.original.xml (130 B)
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Author(s)
Milanowski, Randall
•
Aniceto, Raichelle
•
Hardy, Fred
•
Vermeire, Bert
•
Jacox, Michael
•
Moro, Slaven
•
Cahoy, Kerri
Date Issued
July 2017
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Milanowski, Randall, Aniceto, Raichelle, Hardy, Fred, Vermeire, Bert, Jacox, Michael et al. 2017. "Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager."
Version
Author's final manuscript
Abstract
© 2017 IEEE. Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons - one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
10.1109/nsrec.2017.8115465
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