Solid State MEMS Resonators in Silicon
Author(s)Wang, Wentao, Ph. D. Massachusetts Institute of Technology
Solid State Microelectromechanical systems Resonators in Silicon
Massachusetts Institute of Technology. Department of Mechanical Engineering.
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Two of the greatest challenges in MEMS are those of packaging and integration with CMOS technology. Development of solid state RF MEMS resonators in silicon, resonators that do not require any release etch step, eliminates the necessity for complex encapsulation methods and costly packaging. Such solid state solution could also enable direct integration into front-end-of-line (FEOL) processing in CMOS, making these devices an attractive choice for on-chip signal generation and signal processing. This thesis discusses the physics, design considerations, and process developments to build such solid state MEMS resonators in silicon, showing a series of incremental stages of the prototyping of such devices. The major challenge of building solid state MEMS resonators lies in maintaining comparable device performance relative to released ones, especially quality factor Q. Energy localization structures, such as acoustic Bragg reflectors (ABRs) are implemented for such solid state resonators to maintain high Q and suppress spurious modes. Towards the goal of high aspectratio structures that have the capability of direct CMOS integration, deep trench (DT) capacitor based MEMS resonators are studied and demonstrated. This concept enables high Q, low loss multi-GHz resonators in a simple, robust manufacturing process.
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2015.Cataloged from PDF version of thesis.Includes bibliographical references (pages 191-196).
DepartmentMassachusetts Institute of Technology. Department of Mechanical Engineering.
Massachusetts Institute of Technology