dc.contributor.advisor | Lionel C. Kimerling. | en_US |
dc.contributor.author | Zheng, Bo | en_US |
dc.date.accessioned | 2005-08-18T12:00:00Z | en_US |
dc.date.available | 2005-08-18T12:00:00Z | en_US |
dc.date.copyright | 1996 | en_US |
dc.date.issued | 1996 | en_US |
dc.identifier.uri | http://hdl.handle.net/1721.1/11249 | |
dc.description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996. | en_US |
dc.description | Includes bibliographical references (leaves 146-152). | en_US |
dc.description.statementofresponsibility | by Bo Zheng. | en_US |
dc.format.extent | 152 leaves | en_US |
dc.format.extent | 9283016 bytes | |
dc.format.extent | 9282771 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | en_US |
dc.publisher | Massachusetts Institute of Technology | en_US |
dc.rights | M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. | en_US |
dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | |
dc.subject | Materials Science and Engineering | en_US |
dc.title | Process integration of erbium-doped silicon light-emitting diodes and MOSFETs | en_US |
dc.type | Thesis | en_US |
dc.description.degree | Ph.D. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | |
dc.identifier.oclc | 34791239 | en_US |