Very-large-scale-integration of complementary carbon nanotube field-effect transistors
Name
1192483926-MIT.pdf
Size
5.14 MB
Format
Adobe PDF
Checksum (MD5)
96feb63646bae210317dda2ce9fba5f5
Author(s)
Lau, Christian Lee.
Advisor(s)
Max M. Shulaker.
Date Issued
2020
Publisher
Massachusetts Institute of Technology
Abstract
Electronics is approaching a major paradigm shift as silicon transistor scaling no longer yields historical energy-efficiency benefits, spurring research towards beyond-silicon nanotechnologies. In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits promise substantial energy-efficiency benefits, but the inability to (1) fabricate complementary metal-oxide-semiconductor (CMOS) CNFET circuits that integrate both PMOS and NMOS CNFETs and (2) perfectly control intrinsic nanoscale defects and variability in carbon nanotubes has precluded the realization of very-large-scale integrated CMOS systems. Here we propose and experimentally demonstrate a comprehensive manufacturing methodology for CNTs, which encompasses a set of original processing and circuit design techniques that are combined to overcome all of these intrinsic CNT challenges (variability, manufacturing defects, and material defects) across full industry-standard large-area substrates. As a demonstration of the feasibility of implementing this manufacturing methodology, we experimentally demonstrate the world's first microprocessor built from a beyond-silicon emerging nanotechnology: RV16X-NANO. This 16-bit microprocessor is based on the RISC-V instruction set, runs standard 32-bit instructions on 16-bit data and addresses, comprises more than 14,000 CMOS CNFETs and is designed and fabricated using industry-standard design flows and processes. This work is a major advance for carbon nanotube-based electronics, and more broadly experimentally validates a promising path towards realizing practical next-generation beyond-silicon electronic systems.
Description
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, May, 2020
Cataloged from the official PDF of thesis.
Includes bibliographical references (pages 78-82).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.
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