Gallium Nitride electronics for cryogenic and high frequency applications
Author(s)Xie, Qingyun,S.M.Massachusetts Institute of Technology.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
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Cryogenic and high frequency electronics have received renewed attention due to their application in the control and readout electronics of quantum computing systems, among others. The potential of AlGaN/GaN HEMTs for cryogenic high frequency application was explored. The performance of AlGaN/GaN HEMTs with both conventional gate material (Ni/Au) and superconducting gate material (NbN) was studied at cryogenic temperature. Furthermore, in order to study device-circuit interaction of the devices, a simulation framework bridging the device-level and circuit-level was developed. The framework was tested on two device concepts, namely GaN p-channel FETs for complementary logic application and the vertical fin transistor for high power RF application.
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, May, 2020Cataloged from the official PDF of thesis.Includes bibliographical references (pages 75-88).
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology
Electrical Engineering and Computer Science.