Show simple item record

Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers

dc.contributor.advisorRafael Reif.en_US
dc.contributor.authorJang, Syun-Mingen_US
dc.date.accessioned2005-08-15T22:35:23Z
dc.date.available2005-08-15T22:35:23Z
dc.date.copyright1993en_US
dc.date.issued1993en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/12744
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1993.en_US
dc.descriptionIncludes bibliographical references (leaves 186-196).en_US
dc.description.statementofresponsibilityby Syun-Ming Jang.en_US
dc.format.extent198 leavesen_US
dc.format.extent14902905 bytes
dc.format.extent14902665 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectMaterials Science and Engineeringen_US
dc.titleGrowth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layersen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc28899012en_US


Files in this item

Thumbnail
Name:
28899012-MIT.pdf
Size:
14.21Mb
Format:
PDF
Description:
Full printable version
View/Open

This item appears in the following Collection(s)

Show simple item record