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dc.contributor.advisorKlaus F. Jensen.en_US
dc.contributor.authorHo, Kwok-Lunen_US
dc.date.accessioned2005-08-15T16:28:10Z
dc.date.available2005-08-15T16:28:10Z
dc.date.copyright1991en_US
dc.date.issued1992en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/13142
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1992.en_US
dc.descriptionIncludes bibliographical references (leaves 147-152).en_US
dc.description.statementofresponsibilityby Kwok-Lun Ho.en_US
dc.format.extentvi, 152 leavesen_US
dc.format.extent9275950 bytes
dc.format.extent9275708 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectChemical Engineeringen_US
dc.titleMetalorganic chemical vapor deposition of aluminum nitride and gallium nitrideen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineering
dc.identifier.oclc26572000en_US


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