Non-stationary transport effects in deep sub-micron channel Si mosfets
Author(s)Shahidi, Ghavam Ghavami
Dimitri A. Antoniadis and Henry I. Smith.
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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineeing, 1989.Includes bibliographical references (leaves -135).
DepartmentMassachusetts Institute of Technology. Dept. of Electrical Engineering
Massachusetts Institute of Technology