| dc.contributor.advisor | Dimitri A. Antoniadis and Henry I. Smith. | en_US |
| dc.contributor.author | Shahidi, Ghavam Ghavami | en_US |
| dc.date.accessioned | 2005-08-10T23:49:39Z | |
| dc.date.available | 2005-08-10T23:49:39Z | |
| dc.date.copyright | 1989 | en_US |
| dc.date.issued | 1989 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/13831 | |
| dc.description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineeing, 1989. | en_US |
| dc.description | Includes bibliographical references (leaves [132]-135). | en_US |
| dc.description.statementofresponsibility | by Ghavam Ghavami Shahidi. | en_US |
| dc.format.extent | 135 leaves | en_US |
| dc.format.extent | 7330178 bytes | |
| dc.format.extent | 7329937 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | eng | en_US |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | |
| dc.subject | Electrical Engineering | en_US |
| dc.title | Non-stationary transport effects in deep sub-micron channel Si mosfets | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | Ph.D. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | |
| dc.identifier.oclc | 24578079 | en_US |
