Show simple item record

dc.contributor.authorBair, Lawrence A.en_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2022-10-17T20:00:55Z
dc.date.available2022-10-17T20:00:55Z
dc.date.copyright1986en_US
dc.date.issued1986en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/145868
dc.descriptionThesis: M.S., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1986en_US
dc.descriptionBibliography: leaves 64-65.en_US
dc.description.statementofresponsibilityby Lawrence A. Bair.en_US
dc.format.extent[1], 69 leavesen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleMeasurement of electron drift velocity in MOSFET inversion layers at high electric fieldsen_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.identifier.oclc15688051en_US
dc.description.collectionM.S. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Scienceen_US
dspace.imported2022-10-17T20:00:55Zen_US
mit.thesis.degreeMasteren_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record