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dc.contributor.authorCherkassky, Alexander (Alexander Peter), 1963-en_US
dc.date.accessioned2005-06-02T14:46:41Z
dc.date.available2005-06-02T14:46:41Z
dc.date.copyright1995en_US
dc.date.issued1995en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/17405
dc.descriptionThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.en_US
dc.descriptionIncludes bibliographical references (leaf 47).en_US
dc.description.statementofresponsibilityby Alexander Cherkassky.en_US
dc.format.extent47 leavesen_US
dc.format.extent1579880 bytes
dc.format.extent1579688 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Scienceen_US
dc.titleMetrology of thin silicon expitaxial films : determination of epitaxial film thickness by Fourier-transform infra-red spectrometryen_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc33231086en_US


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