Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure
Name
243501_1_5.0203344.pdf
Description
Published version
Size
1.57 MB
Format
Adobe PDF
Checksum (MD5)
17e4b3095710b1c982d57f372231bb84
Author(s)
Sikder, Bejoy
Hossain, Toiyob
Xie, Qingyun
Niroula, John
Rajput, Nitul S
Teo, Koon Hoo
Amano, Hiroshi
Palacios, Tomás
Chowdhury, Nadim
Date Issued
June 10, 2024
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Bejoy Sikder, Toiyob Hossain, Qingyun Xie, John Niroula, Nitul S. Rajput, Koon Hoo Teo, Hiroshi Amano, Tomás Palacios, Nadim Chowdhury; Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure. Appl. Phys. Lett. 10 June 2024; 124 (24): 243501.
Version
Final published version
Abstract
This Letter reports an investigation of hole transport in p-GaN/AlGaN/GaN heterostructures through experimental and theoretical analyses under varied conditions. Highly non-linear current–voltage (I–V) characteristics, obtained via the linear transmission line method measurements, are utilized for this study. At low bias voltage, the transport can be ascribed to the Schottky nature of the contact, while at high bias, the conduction is observed to be governed by space-charge limited current (SCLC). The Schottky characteristics (Schottky barrier height and non-ideality factor) and the SCLC exponent were analyzed for devices with varying contact spacings and at different high temperatures. The SCLC exponent, m, is in the range of 2≤m≤4 depending on the applied voltage range, revealing the existence of the trap states in the channel region. The findings of this work indicate that the charge injection, field-induced ionization, and trap states in the p-GaN channel are critical factors in the current transport of p-GaN/AlGaN/GaN heterostructure.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1063/5.0203344
