Switching Topological States via Uniaxial Strain in 2D Materials
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ijt-03-00014.pdf
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2.43 MB
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Author(s)
Sanchez, Joshua J.
Arora, Raagya
Bennett, Daniel
Larson, Daniel T.
Kaxiras, Efthimios
Comin, Riccardo
Date Issued
July 1, 2026
Journal
International Journal of Topology
Publisher
Multidisciplinary Digital Publishing Institute
Citation
Sanchez, J.J.; Arora, R.; Bennett, D.; Larson, D.T.; Kaxiras, E.; Comin, R. Switching Topological States via Uniaxial Strain in 2D Materials. Int. J. Topol. 2026, 3, 14.
Version
Final published version
Abstract
In topological materials, dissipationless edge currents are protected against local defect scattering by the bulk inverted band structure and band gap. We propose that large uniaxial strain can effectively switch a 2D Chern insulator to a topologically trivial state. Further, we suggest that the boundary between strained and unstrained regions of a sample can act as a new edge for dissipationless current flow. Using density functional theory (DFT) calculations we demonstrate the strain-tunability of the monolayer MnBi2S2Te2
band structure and the switching of the Chern number. We combine uniaxial and biaxial strain results to map out the strain-tuned topological phase diagram.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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Creative Commons Attribution
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DOI of Published Version
https://doi.org/10.3390/ijt3030014
