Germanium on insulator fabrication technology
Author(s)Hennessy, John, 1980-
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
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As CMOS devices continue to scale to smaller dimensions, it has become clear that new materials and structures are needed to also continue to improve performance. Germanium on insulator is proposed as it combines both a high mobility material (relative to silicon) and a structure with improved scaling characteristics compared to bulk devices. The goal of this work is to develop of procedure for the transfer of a germanium layer to bulk silicon by means of wafer bonding and hydrogen-induced layer transfer.
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.Includes bibliographical references (p. 53-55).
DepartmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology
Electrical Engineering and Computer Science.