Magnetically assisted statistical assembly of III-V heterostructures on silicon : initial process and technology development
Author(s)Perkins, James Michael, 1978-
Magnetically assisted statistical III-V device assembly on Si substrates
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Clifton G. Fonstad, Jr.
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This work is the initial investigation of magnetically assisted statistical assembly (MASA), a novel silicon I-v integration technique developed at M.I.T. Initially procedures for processing optoelectronic devices into magnetically sensitive 40 micron discs were performed and refined. Cobalt palladium thin films were obtained and their magnetic properties were studied. An initial procedure was developed to easily integrate these patterned, magnetized films with 60-micron diameter, 5-micron deep recesses. Pill devices were then integrated into these magnetically attractive recesses. The studied showed optoelectronic pills with magnetic layers could be successfully produced and collected. Assembly using these pills was performed and showed improved recess filling yields over the non-magnetic assembly, though more investigation needs to be done. MASA was shown to offer promise as a viable and promising technique for mixed device integration.
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.Includes bibliographical references (leaf 75).
DepartmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology
Electrical Engineering and Computer Science.