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dc.contributor.advisorClifton G. Fonstad, Jr.en_US
dc.contributor.authorPerkins, James Michael, 1978-en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2006-05-15T20:24:17Z
dc.date.available2006-05-15T20:24:17Z
dc.date.copyright2002en_US
dc.date.issued2002en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/32712
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.en_US
dc.descriptionIncludes bibliographical references (leaf 75).en_US
dc.description.abstractThis work is the initial investigation of magnetically assisted statistical assembly (MASA), a novel silicon I-v integration technique developed at M.I.T. Initially procedures for processing optoelectronic devices into magnetically sensitive 40 micron discs were performed and refined. Cobalt palladium thin films were obtained and their magnetic properties were studied. An initial procedure was developed to easily integrate these patterned, magnetized films with 60-micron diameter, 5-micron deep recesses. Pill devices were then integrated into these magnetically attractive recesses. The studied showed optoelectronic pills with magnetic layers could be successfully produced and collected. Assembly using these pills was performed and showed improved recess filling yields over the non-magnetic assembly, though more investigation needs to be done. MASA was shown to offer promise as a viable and promising technique for mixed device integration.en_US
dc.description.statementofresponsibilityby James Michael Perkins.en_US
dc.format.extent75 leavesen_US
dc.format.extent4116168 bytes
dc.format.extent4119290 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleMagnetically assisted statistical assembly of III-V heterostructures on silicon : initial process and technology developmenten_US
dc.title.alternativeMagnetically assisted statistical III-V device assembly on Si substratesen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc51480469en_US


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