Now showing items 1-3 of 3

    • Charge storage in nanocrystal systems: Role of defects? 

      Kan, Eric Win Hong; Choi, Wee Kiong; Chim, Wai Kin; Antoniadis, Dimitri A.; Fitzgerald, Eugene A. (2004-01)
      Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. ...
    • Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications 

      Kan, Eric Win Hong; Leoy, C.C.; Choi, Wee Kiong; Chim, Wai Kin; Antoniadis, Dimitri A.; e.a. (2003-01)
      In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing ...
    • Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering 

      Kan, Eric Win Hong; Koh, B.H.; Choi, Wee Kiong; Chim, Wai Kin; Antoniadis, Dimitri A.; e.a. (2005-01)
      Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...