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High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching
(2005-01)
Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman ...
Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method
(2005-01)
Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the ...
Growth of ZnO Nanorods on GaN Using Aqueous Solution Method
(2005-01)
Uniformly distributed ZnO nanorods with
diameter 80-120 nm and 1-2µm long have been
successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and ...
High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
(2005-01)
The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...