Search
Now showing items 1-1 of 1
The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge
(2003-01)
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...