Search
Now showing items 1-2 of 2
MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
(2003-01)
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...
SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
(2003-01)
Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ...