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Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method
(2005-01)
Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the ...
The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates
(2005-01)
The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN ...
Growth of ZnO Nanorods on GaN Using Aqueous Solution Method
(2005-01)
Uniformly distributed ZnO nanorods with
diameter 80-120 nm and 1-2µm long have been
successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and ...