Advanced Materials for Micro- and Nano-Systems (AMMNS): Recent submissions
Now showing items 52-54 of 122
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Length Effects on the Reliability of Dual-Damascene Cu Interconnects
(2002-01)The effects of interconnect length on the reliability of dual-damascene Cu metallization have been investigated. As in Al-based interconnects, the lifetimes of Cu lines increase with decreasing length. However, unlike ... -
Investigation of the Fundamental Reliability Unit for Cu Dual-Damascene Metallization
(2002-01)An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via interconnects in the ... -
Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
(2002-01)Graded InGaN buffers are employed to relax the strain arising from the lattice and thermal mismatches between GaN/InGaN epilayers grown on sapphire. The formation of V-pits in linearly graded InGaN/GaN bulk epilayers is ...
