Advanced Materials for Micro- and Nano-Systems (AMMNS): Recent submissions
Now showing items 70-72 of 122
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Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)
(2004-01)AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been ... -
Review of Direct Metal Bonding for Microelectronic Interconnections
(2004-01)Microelectronic interconnections require advanced joining techniques. Direct metal bonding methods, which include thercomsonic and thermocompression bonding, offer remarkable advantages over soldering and adhesives joining. ... -
Plastic Relaxation In Single InᵡGa₁â‚‹ᵡN/GaN Epilayers Grown On Sapphire
(2004-01)Plastic relaxation was observed in InᵡGa₁â‚‹ᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer ...
