Now showing items 82-84 of 122

    • Gold Thermocompression Wafer Bonding 

      Spearing, S. Mark; Tsau, Christine H.; Schmidt, Martin A. (2004-01)
      Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, ...
    • GaN Nanopore Arrays: Fabrication and Characterization 

      Wang, Yadong; Peng, Chen; Sander, Melissa; Chua, Soo-Jin; Fonstad, Clifton G. Jr. (2004-01)
      GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...
    • Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects 

      Choi, Z.-S.; Gan, C.L.; Wei, F.; Thompson, Carl V.; Lee, J.H.; e.a. (2004-01)
      The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads ...