Simulations of nanoscale spatial disorder
Author(s)
Howe, Ethan (Ethan Gabriel Grief)
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Other Contributors
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor
Vladimir Bulović.
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In this thesis, we detail the design, implementation, and testing of two simulations of nanometer scale disorder phenomena important for electronic device fabrication. We created a kinetic simulator for the surface assembly of quantum dots into ordered or disordered monolayers. We utilized a platform for high-precision motion and collision resolution and implemented the behavior of quantum dots on a surface. The simulation demonstrated experimentally observed behavior and offers insights into future device design. We also created a material simulation of the electrochemical oxidation of a metal surface with nanoscale roughness. We demonstrated that by preserving the amount of metal and making the oxide coating conformal, anodization can highly planarize the metal surface. We verify the convergence of our results as we increase the accuracy of our model. We demonstrate differences in the rate of planarization between additive and subtractive surface features which could not be observed by experiment and make predictions about the planarization of metals with different oxide expansion coefficients.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006. Includes bibliographical references (p. 125-127).
Date issued
2006Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer SciencePublisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.