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dc.contributor.advisorVladimir Bulović.en_US
dc.contributor.authorHowe, Ethan (Ethan Gabriel Grief)en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2007-04-20T15:49:43Z
dc.date.available2007-04-20T15:49:43Z
dc.date.copyright2006en_US
dc.date.issued2006en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/37205
dc.descriptionThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.en_US
dc.descriptionIncludes bibliographical references (p. 125-127).en_US
dc.description.abstractIn this thesis, we detail the design, implementation, and testing of two simulations of nanometer scale disorder phenomena important for electronic device fabrication. We created a kinetic simulator for the surface assembly of quantum dots into ordered or disordered monolayers. We utilized a platform for high-precision motion and collision resolution and implemented the behavior of quantum dots on a surface. The simulation demonstrated experimentally observed behavior and offers insights into future device design. We also created a material simulation of the electrochemical oxidation of a metal surface with nanoscale roughness. We demonstrated that by preserving the amount of metal and making the oxide coating conformal, anodization can highly planarize the metal surface. We verify the convergence of our results as we increase the accuracy of our model. We demonstrate differences in the rate of planarization between additive and subtractive surface features which could not be observed by experiment and make predictions about the planarization of metals with different oxide expansion coefficients.en_US
dc.description.statementofresponsibilityby Ethan Gabriel Grief Howe.en_US
dc.format.extent127 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleSimulations of nanoscale spatial disorderen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc79652277en_US


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