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dc.contributor.authorWang, S.Z.
dc.contributor.authorYoon, Soon Fatt
dc.date.accessioned2003-11-29T20:44:27Z
dc.date.available2003-11-29T20:44:27Z
dc.date.issued2003-01
dc.identifier.urihttp://hdl.handle.net/1721.1/3752
dc.description.abstractGaAs-based nitride is found to be sensitive to growth conditions and ex-situ annealing processes. The critical thickness is almost one order thicker than the theoretical prediction by force balance model. The growth process could be sped up by the nitrogen incorporation itself, while the nitrogen incorporation could be affected by Beryllium doping. The incorporated nitrogen atoms partly occupy substitutional sites for Arsenic. Some nitrogen atoms are at interstitial sites. Annealing could drastically increase the optical quality of GaAs-based nitrides. As an end of this paper, some preliminary results of InGaAsN/GaAsN/AlGaAs laser diodes are also presented.en
dc.description.sponsorshipSingapore-MIT Alliance (SMA)en
dc.format.extent619925 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.relation.ispartofseriesInnovation in Manufacturing Systems and Technology (IMST);
dc.subjectInGaAsN/GaAsen
dc.subjectquantum wellen
dc.subjectmolecular beam epitaxyen
dc.subjectlaser diodeen
dc.titlePreliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µmen
dc.typeArticleen


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