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Characterization of LOCOS and oxidized mesa isolation in deep-sub micrometer SOI NMOS processes

dc.contributor.advisorJames E. Chung.en_US
dc.contributor.authorThomas, Jeffrey Wadeen_US
dc.date.accessioned2007-07-18T13:31:08Z
dc.date.available2007-07-18T13:31:08Z
dc.date.copyright1995en_US
dc.date.issued1995en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/38062
dc.descriptionThesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.en_US
dc.descriptionIncludes bibliographical references (leaves 76-77).en_US
dc.description.statementofresponsibilityby Jeffrey Wade Thomas.en_US
dc.format.extent127 leavesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Scienceen_US
dc.titleCharacterization of LOCOS and oxidized mesa isolation in deep-sub micrometer SOI NMOS processesen_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc33342500en_US


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