High hole and electron mobilities using Strained Si/Strained Ge heterostructures
Author(s)
Gupta, Saurabh; Lee, Minjoo L.; Leitz, Christopher W.; Fitzgerald, Eugene A.
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PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enhancements.
Date issued
2004-01Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Keywords
strained-Ge, SiGe, germanium, MOSFET, mobility, strained-Si, pMOSFET, nMOSFET, germanium-diffusion