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dc.contributor.advisorJesús A. del Alamo.en_US
dc.contributor.authorJoh, Jungwooen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2007-08-29T20:42:01Z
dc.date.available2007-08-29T20:42:01Z
dc.date.copyright2007en_US
dc.date.issued2007en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/38670
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.en_US
dc.descriptionIncludes bibliographical references (p. 83-85).en_US
dc.description.abstractIn spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. However, physical understanding of the fundamental reliability mechanisms of GaN HEMTs is still lacking today. In this thesis, we carry out systematic reliability experiments on industrial GaN HEMTs provided by our collaborators, TriQuint Semiconductor and BAE systems. In our study, GaN HEMTs have been electrically stressed at various bias conditions while they are being characterized by a benign characterization suite. We have confirmed that electrical stress on devices results in an increase in drain resistance RD and a decrease in maximum drain current IDmax. During the stress, traps are found to be generated. We have seen that this degradation is driven mostly by electric field, and current is less relevant to electrical degradation.en_US
dc.description.abstract(cont.) From a set of our experiments, we have hypothesized that the main mechanism behind device degradation is defect formation through the inverse piezoelectric effect and subsequent electron trapping. Unlike current conventional wisdom, hot electrons are less likely to be the direct cause of electrical degradation in the devices that we have studied. Our studies suggest a number of possibilities to improve the electrical reliability of GaN HEMTs.en_US
dc.description.statementofresponsibilityby Jungwoo Joh.en_US
dc.format.extent85 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleDegradation mechanisms of GaN high electron mobility transistorsen_US
dc.title.alternativeDegradation mechanisms of GaN HEMTsen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc163897283en_US


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