| dc.contributor.advisor | Clifton G. Fonstad, Jr. | en_US |
| dc.contributor.author | Hoshino, Isako. | en_US |
| dc.date.accessioned | 2008-11-07T19:33:12Z | |
| dc.date.available | 2008-11-07T19:33:12Z | |
| dc.date.copyright | 1997 | en_US |
| dc.date.issued | 1997 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/43365 | |
| dc.description | Includes bibliographical references (p. 181-186). | en_US |
| dc.description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1997. | en_US |
| dc.description | Vita. | en_US |
| dc.description.statementofresponsibility | by Isako Hoshino. | en_US |
| dc.format.extent | 187 p. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | en_US |
| dc.subject | Materials Science and Engineering | en_US |
| dc.title | Hyperthermal molecular beam dry etching of III-V compound semiconductors | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | Ph.D. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | |
| dc.identifier.oclc | 37525736 | en_US |
