6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002
Author(s)
Del Alamo, Jesus; Tuller, Harry L.
Download6-720JFall-2002/OcwWeb/Electrical-Engineering-and-Computer-Science/6-720JIntegrated-Microelectronic-DevicesFall2002/CourseHome/index.htm (15.20Kb)
Alternative title
Integrated Microelectronic Devices
Metadata
Show full item recordAbstract
The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling outlined. Includes device characterization projects and device design project.
Date issued
2002-12Other identifiers
6.720J-Fall2002
local: 6.720J
local: 3.43J
local: IMSCP-MD5-d47580483441c18496fb0c64e87bdaab
Keywords
integrated microelectronic devices, physics, silicon, circuit, semiconductor, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, bipolar junction transistor, energy band diagram, short-channel MOSFET, device characterization, device design, 6.720J, 3.43J, 6.720, 3.43, Microelectronics