Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel
Author(s)
Reina Ceeco, Alfonso![Thumbnail](/bitstream/handle/1721.1/59230/666447099-MIT.pdf.jpg?sequence=5&isAllowed=y)
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Other Contributors
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Advisor
Jing Kong.
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Show full item recordAbstract
An ambient pressure chemical vapor deposition (APCVD) process is used to fabricate graphene based films consisting of one to several graphene layers across their area. Polycrystalline Ni thin films are used and the graphene can be transferred from the Ni surface to dielectric substrates in order to integrate them to graphene device prototypes. Uniform single layer graphene can be grown with the same process by using single crystalline Ni with a (111) surface orientation. Raman spectroscopy and electron diffraction characterization is undertaken in order to determine the nature of the layer stacking for the case of multilayer graphene.
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010. Includes bibliographical references (p. 169-177).
Date issued
2010Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringPublisher
Massachusetts Institute of Technology
Keywords
Materials Science and Engineering.