Show simple item record

dc.contributor.advisorJing Kong.en_US
dc.contributor.authorReina Ceeco, Alfonsoen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2010-10-12T18:48:49Z
dc.date.available2010-10-12T18:48:49Z
dc.date.copyright2010en_US
dc.date.issued2010en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/59230
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.en_US
dc.descriptionIncludes bibliographical references (p. 169-177).en_US
dc.description.abstractAn ambient pressure chemical vapor deposition (APCVD) process is used to fabricate graphene based films consisting of one to several graphene layers across their area. Polycrystalline Ni thin films are used and the graphene can be transferred from the Ni surface to dielectric substrates in order to integrate them to graphene device prototypes. Uniform single layer graphene can be grown with the same process by using single crystalline Ni with a (111) surface orientation. Raman spectroscopy and electron diffraction characterization is undertaken in order to determine the nature of the layer stacking for the case of multilayer graphene.en_US
dc.description.statementofresponsibilityby Alfonso Reina Ceeco.en_US
dc.format.extent177 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineering.en_US
dc.titleSingle- and few-layer graphene by ambient pressure chemical vapor deposition on nickelen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc666447099en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record