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dc.contributor.advisorDuane S. Boning.en_US
dc.contributor.authorGoGwilt, Cai P. (Cai Peter)en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2011-10-17T21:23:55Z
dc.date.available2011-10-17T21:23:55Z
dc.date.copyright2011en_US
dc.date.issued2011en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/66419
dc.descriptionThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (p. 67-68).en_US
dc.description.abstractNanoimprint lithography (NIL) is a method for fabricating nano-scale patterns by pressing stamps into viscous materials. A key barrier to industry adoption of NIL is the inability to predict whether a stamp will imprint successfully and how long the process should be run for. In this thesis, we help quantify the accuracy loss for an existing simulation package, simprint, which supports geometric abstractions and can simulate at the die level. To do this, we develop and study several comparison metrics. Our temporal submetric quantifies the error between two simulations at each timestep, while our spatial submetric quantifies the error at each spatial location. We subsequently use these metrics to study pattern abstraction by looking at how different types of patterns lead to different errors. This would allow us to suggest pattern abstractions that could improve the accuracy of a simulation. However, none of the features we study correlate with error. We conclude by exploring other possible uses of our metrics.en_US
dc.description.statementofresponsibilityby Cai P. GoGwilt.en_US
dc.format.extent68 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleThe effects of feature geometry on simulating nanoimprint lithographyen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc755095881en_US


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