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dc.contributor.advisorJing Kong.en_US
dc.contributor.authorFang, Wenjing, Ph. D. Massachusetts Institute of Technologyen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2012-12-13T18:49:45Z
dc.date.available2012-12-13T18:49:45Z
dc.date.copyright2012en_US
dc.date.issued2012en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/75656
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (p. 49-51).en_US
dc.description.abstractSuccessfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films were successfully grown. Furthermore, the quality of the bilayer was confirmed using Raman spectroscopy. Finally, we consider future studies that may reveal the underlying mechanisms behind bilayer growth.en_US
dc.description.statementofresponsibilityby Wenjing Fang.en_US
dc.format.extent51 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleBilayer graphene growth by low pressure chemical vapor deposition on copper foilen_US
dc.title.alternativeBilayer graphene growth by LPCVD on copper foilen_US
dc.title.alternativeBilayer graphene growth using coroneneen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc818359166en_US


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