On the 1/f noise of atomic-layer-deposition metal films
Author(s)
Wang, Xiawa![Thumbnail](/bitstream/handle/1721.1/77000/825558250-MIT.pdf.jpg?sequence=5&isAllowed=y)
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Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Advisor
Aleksandar Kojic and James K. Roberge.
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This thesis presents the measurement techniques and results of low-frequency noise for atomic-layer-deposition Pt films. Atomic-layer-deposition has been developed as an approach to make ultra-thin and conformal films. It has been employed to make detectors of bolometers. 1/f noise is a fundamental limit to the resolution. The experiments are designed to characterize the 1/f noise of the ALD fabricated Pt films. The measurement results show that for 7nm and 13nm ALD fabricated Pt films, 1/f noise is about two orders of magnitude larger than reported for continuous Pt films in literature. The thin film is also very likely to suffer from electromigration damage.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2012. "February 2011." Cataloged from PDF version of thesis. Includes bibliographical references (p. 77-81).
Date issued
2012Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer SciencePublisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.