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dc.contributor.advisorAleksandar Kojic and James K. Roberge.en_US
dc.contributor.authorWang, Xiawaen_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2013-02-14T15:36:51Z
dc.date.available2013-02-14T15:36:51Z
dc.date.issued2012en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/77000
dc.descriptionThesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2012.en_US
dc.description"February 2011." Cataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (p. 77-81).en_US
dc.description.abstractThis thesis presents the measurement techniques and results of low-frequency noise for atomic-layer-deposition Pt films. Atomic-layer-deposition has been developed as an approach to make ultra-thin and conformal films. It has been employed to make detectors of bolometers. 1/f noise is a fundamental limit to the resolution. The experiments are designed to characterize the 1/f noise of the ALD fabricated Pt films. The measurement results show that for 7nm and 13nm ALD fabricated Pt films, 1/f noise is about two orders of magnitude larger than reported for continuous Pt films in literature. The thin film is also very likely to suffer from electromigration damage.en_US
dc.description.statementofresponsibilityby Xiawa Wang.en_US
dc.format.extent81 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleOn the 1/f noise of atomic-layer-deposition metal filmsen_US
dc.typeThesisen_US
dc.description.degreeM.Eng.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc825558250en_US


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