Modeling poly-silicon gate depletion in submicron MOS devices

Author(s)
Li, James Chingwei, 1975-
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Alternative title
Modeling poly-silicon gate depletion in submicron metal oxide semiconductor devices
Advisor
Stephen D. Senturia.
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Description
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
 
Includes bibliographical references (p. 119-121).
 
Date issued
1999
URI
http://hdl.handle.net/1721.1/80100
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Publisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science
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