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dc.contributor.advisorJesús A. del Alamo and Lawrence G. Studebaker.en_US
dc.contributor.authorMertens, Samuel D. (Samuel David), 1975-en_US
dc.date.accessioned2014-01-23T18:28:56Z
dc.date.available2014-01-23T18:28:56Z
dc.date.copyright1999en_US
dc.date.issued1999en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/84210
dc.descriptionThesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.en_US
dc.descriptionIncludes bibliographical references (p. 97-102).en_US
dc.description.statementofresponsibilityby Samuel D. Mertens.en_US
dc.format.extent102 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Scienceen_US
dc.titleElectrical degradation of InAlAs/InGaAs metamorphic high electron mobility transistorsen_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc43552091en_US


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