Gallium Nitride phononic crystal resonator
Author(s)Wang, Siping, S.M. Massachusetts Institute of Technology
GaN phononic crystal resonator
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
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We present a Gallium Nitride (GaN) Lamb Wave resonator using a Phononic Crystal (PnC) to selectively confine elastic vibrations with wide-band spurious mode suppression. A unique feature of the design demonstrated here is a folded PnC structure to relax energy confinement in the non-resonant dimension and to enable routing access of piezoelectric transducers inside the resonant cavity. This provides a clean spectrum over a wide frequency range and improves series resistance relative to transmission line or tethered resonators by allowing a low-impedance path for drive and sense electrodes. GaN resonators are demonstrated with wide-band suppression of spurious modes, f -Q product up to 3.06 x 1012, and resonator coupling coefficient k2.eff up to 0.23%. (filter BW up to 0.46%). Furthermore, these PnC GaN resonators exhibit record-breaking power handling, with IIP3 of +27.2dBm demonstrated at 993MHz.
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.Cataloged from PDF version of thesis.Includes bibliographical references (pages 41-42).
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology
Electrical Engineering and Computer Science.