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dc.contributor.advisorDana Weinsteinen_US
dc.contributor.authorWang, Siping, S.M. Massachusetts Institute of Technologyen_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2015-11-09T19:51:40Z
dc.date.available2015-11-09T19:51:40Z
dc.date.copyright2015en_US
dc.date.issued2015en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/99831
dc.descriptionThesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 41-42).en_US
dc.description.abstractWe present a Gallium Nitride (GaN) Lamb Wave resonator using a Phononic Crystal (PnC) to selectively confine elastic vibrations with wide-band spurious mode suppression. A unique feature of the design demonstrated here is a folded PnC structure to relax energy confinement in the non-resonant dimension and to enable routing access of piezoelectric transducers inside the resonant cavity. This provides a clean spectrum over a wide frequency range and improves series resistance relative to transmission line or tethered resonators by allowing a low-impedance path for drive and sense electrodes. GaN resonators are demonstrated with wide-band suppression of spurious modes, f -Q product up to 3.06 x 1012, and resonator coupling coefficient k2.eff up to 0.23%. (filter BW up to 0.46%). Furthermore, these PnC GaN resonators exhibit record-breaking power handling, with IIP3 of +27.2dBm demonstrated at 993MHz.en_US
dc.description.statementofresponsibilityby Siping Wang.en_US
dc.format.extent42 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleGallium Nitride phononic crystal resonatoren_US
dc.title.alternativeGaN phononic crystal resonatoren_US
dc.typeThesisen_US
dc.description.degreeS.M.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.identifier.oclc927353020en_US


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